Development of GaN Vertical Trench-MOSFET With MBE Regrown Channel
نویسندگان
چکیده
منابع مشابه
AlGaN/GaN HEMTs on Si by MBE with regrown contacts and fT = 153 GHz
AlGaN/GaN high-electron-mobility transistors (HEMT) have been grown by radio frequency molecular beam epitaxy (RF-MBE) on 3” Si substrates. A record low contact resistance Rc ~ 0.11 .mm has been achieved for GaN HEMTs on Si by using non alloyed ohmic contacts regrown by MBE. Owing to the low contact resistance a 75-nm gate length unpassivated HEMT shows intrinsic current gain cut-off frequency ...
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We report 30-nm-gate-length InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs) with a record current gain cutoff frequency (fT ) of 370 GHz. The HEMT without back barrier exhibits an extrinsic transconductance (gm.ext) of 650 mS/mm and an on/off current ratio of 10 owing to the incorporation of dielectric-free passivation and regrown ohmic contacts with a contact resistance of 0.16 Ω ...
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2018
ISSN: 0018-9383,1557-9646
DOI: 10.1109/ted.2018.2829125